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Thermal management

Electric compressor — key device selection

Engineering problem

An electric A/C compressor drives 1–5 kW with high DC bus voltage and continuous duty. The inverter must handle high inrush at start, keep switching losses manageable in a confined aluminium housing, and report faults before thermal shutdown.

System block diagram

Input protection TVS / HV protection
Control Automotive MCU
Gate drive Gate driver IC
Power stage MOSFET / SiC MOSFET / IGBT
Motor BLDC / PMSM (load)
Branch
Sensing Current-sense amplifier / shunt

Block list (text version)

  1. Input protection TVS / HV protection
  2. Control Automotive MCU
  3. Gate drive Gate driver IC
  4. Power stage MOSFET / SiC MOSFET / IGBT
  5. Motor BLDC / PMSM (load)
  6. Sensing Current-sense amplifier / shunt

Input protection

TVS / HV protection

Why this device: HV bus transients and pre-charge inrush can exceed the inverter's absolute maximum.

How to choose: Match the stand-off voltage to the maximum bus voltage including regenerative pumping, and check pulse energy.

Brands we can supply: WAYONLittelfuseonsemi
Part number Brand Category Package Qualification Operating temperature Key parameters Docs Actions
1SMB30CAT3G In stock onsemi TVS Diodes SMB AEC-Q101 qualified -55 °C ~ +150 °C vrwm: 30 V · ppp: 600 W · direction: Uni-directional Datasheet ↗
1.5KE24CA-TP MCC Transient Voltage Suppressor Qualification to be verified To be confirmed To be confirmed Datasheet ↗
1.5KE250A-TP In stock MCC TVS Diodes DO-201AE Qualification to be verified To be confirmed To be confirmed Datasheet ↗
1.5KE480A WAYON Transient Voltage Suppressor Qualification to be verified To be confirmed To be confirmed Datasheet ↗
1.5SMC33CA LITTLEFUSE Transient Voltage Suppressor Qualification to be verified To be confirmed To be confirmed Datasheet ↗
1.5SMC6.8CA In stock Littelfuse TVS Diodes SMC Qualification to be verified To be confirmed To be confirmed To be confirmed

Control

Automotive MCU

Why this device: Field-oriented control, PWM with dead-time, over-current and over-temperature diagnostics over CAN FD.

How to choose: FOC needs deterministic ADC sampling and sufficient MIPS; check the safety level expected by the OEM.

Brands we can supply: NXPInfineonTIMicrochip
Part number Brand Category Package Qualification Operating temperature Key parameters Docs Actions
MKE04Z8VWJ4 In stock NXP Microcontrollers (MCU) SOIC-20 AEC-Q100 Grade 1 qualified -40 °C ~ +125 °C core: Arm Cortex-M0+ · freq: 48 MHz · flash: 8 KB Datasheet ↗
ATMEGA32A-AU In stock Microchip Microcontrollers (MCU) TQFP-44 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
ATSAM4S2AA-MU In stock Microchip Microcontrollers (MCU) QFN-48 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
BS83A01C In stock Holtek Microcontrollers (MCU) SOT-23-6 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
HT66F002/MSOP10 In stock Holtek Microcontrollers (MCU) MSOP-10 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
MM32F0010A1N In stock MindMotion MCU (Value Line) QFN-20 Qualification to be verified To be confirmed To be confirmed Datasheet ↗

Sensing

Current-sense amplifier / shunt

Why this device: Phase current feedback for FOC and for short-circuit protection within microseconds.

How to choose: Common-mode range and response time matter more than DC accuracy here.

Brands we can supply: TIonsemiADIRUNIC
Part number Brand Category Package Qualification Operating temperature Key parameters Docs Actions
INA199B2QDCKRQ1 In stock TI Amplifiers & Linear SOT-SC70-6 AEC-Q100 Grade 1 qualified -40 °C ~ +125 °C supply: 2.7 ~ 26 V · channel: 1 · bw: 105 kHz Datasheet ↗
LM2901MX/NOPB In stock TI Amplifiers & Linear SOIC-14 AEC-Q100 Grade 1 qualified -40 °C ~ +125 °C channel: 4 · bw: 1.3 MHz · vos: ±2 mV Datasheet ↗
ACE358MTR-E1 In stock ACE Operational Amplifiers SOP-8 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
AD822ARZ-REEL7 In stock ADI Operational Amplifiers SOIC-8 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
LM258DR2G In stock onsemi Operational Amplifiers (Op-Amp) SOIC-8 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
LM2903XK In stock Runic Comparators SOT-23-5 Qualification to be verified To be confirmed To be confirmed Datasheet ↗

Gate drive

Gate driver IC

Why this device: High-side drive with short propagation delay and desaturation protection for the power stage.

How to choose: Check CMTI if isolated, propagation delay matching between channels, and fault clearing behaviour.

Brands we can supply: onsemiInfineonSemimentNSIC
Part number Brand Category Package Qualification Operating temperature Key parameters Docs Actions
FAN3224TMX In stock onsemi Gate Drivers SOIC-8 AEC-Q100 Grade 1 qualified -40 °C ~ +125 °C channel: 2 · current: 4 A · voltage: 18 V Datasheet ↗
CFG2211S Available to order Chipflow Gate Drivers SOP8 Qualification to be verified To be confirmed To be confirmed To be confirmed
CFG2216M Available to order Chipflow Gate Drivers MSOP10 Qualification to be verified To be confirmed To be confirmed To be confirmed
CFG2241S Available to order Chipflow Gate Drivers SOP8 Qualification to be verified To be confirmed To be confirmed To be confirmed
CFG2242D Available to order Chipflow Gate Drivers DFN10-3x3 Qualification to be verified To be confirmed To be confirmed To be confirmed
CFG2246S Available to order Chipflow Gate Drivers SOP8 Qualification to be verified To be confirmed To be confirmed To be confirmed

Power stage

MOSFET / SiC MOSFET / IGBT

Why this device: The inverter bridge; efficiency and junction temperature determine whether the compressor can run continuously at full load.

How to choose: At 400 V+ buses, 650 V or 1200 V devices; SiC for high switching frequency and efficiency, IGBT where cost and surge capability dominate.

Brands we can supply: InfineononsemiInventChipNCECREE
Part number Brand Category Package Qualification Operating temperature Key parameters Docs Actions
BSC026N02KSGAUMA1 In stock Infineon OptiMOS Low-Voltage MOSFETs SC026 AEC-Q101 qualified -55 °C ~ +150 °C channel: N · vds: 25 V · id: 100 A Datasheet ↗
C3D08065I In stock CREE SiC Schottky Diodes TO-220-2 Isolated AEC-Q101 qualified -55 °C ~ +150 °C vds: 650 V · id: 8 A · rds: — Datasheet ↗
2N7002-TP In stock MCC Small-Signal MOSFETs SOT-23 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
2N7002DW-TP In stock MCC Small-Signal MOSFETs SOT-363 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
2N7002E-7-F In stock Diodes Small-Signal N-Channel MOSFETs SOT-23 Qualification to be verified To be confirmed To be confirmed Datasheet ↗
2N7002K-TP In stock MCC Small-Signal MOSFETs SOT-23 Qualification to be verified To be confirmed To be confirmed Datasheet ↗

Key selection parameters

DC bus voltage Typically 300–450 V or 48 V mild hybrid
Output power 1–5 kW
Peak phase current Start-up and locked-rotor current
Switching frequency 10–20 kHz (IGBT) / 40–100 kHz (SiC)
Qualification AEC-Q101 for discrete power devices

FAQ

SiC or IGBT for a compressor?

If the housing cannot absorb the loss or the switching frequency must go up, SiC pays for itself; otherwise a well-driven IGBT bridge remains the value choice.

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