SS10N20MS
The SKYSEMI SS10N20MS is an N-channel power MOSFET in a TO-263 package, rated for 200V drain-source voltage and 120A continuous drain current with a low on-resistance of 9.3mΩ (typ), 10.0mΩ (max).
Availability, price and lead time are confirmed with your quotation.
| Manufacturer | SKYSEMI |
| Part number | SS10N20MS |
| Category | MOSFET |
| Package | TO-263 |
| Packaging | Tape & Reel |
| Condition | New & Original |
| Compliance | RoHS Compliant |
| Lifecycle | Confirm with manufacturer |
| Lead time / MOQ | Confirm with quotation |
Product overview
The SKYSEMI SS10N20MS is an N-channel power MOSFET in a TO-263 package, rated for 200V drain-source voltage and 120A continuous drain current with a low on-resistance of 9.3mΩ (typ), 10.0mΩ (max). It is designed for BMS, power supplies, motor control, and DC-DC conversion applications.
Specifications & documentation
Use the official manufacturer documentation to verify electrical characteristics, package dimensions and operating limits before design approval.
Availability & sourcing
Request confirmation of current stock, date code, packaging, price and delivery terms. Product information does not constitute a binding offer; final specifications are confirmed with your quotation.
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